Contact non-linearity, with reference to the metal rectifier and the carborundum ceramic non-linear resistor

An account is presented of an experimental analysis designed to correlate and formulate the behaviour of the various structures possessing contact non-linearity. It is hoped that the results presented may facilitate the development of a simpler and more accurate mathematical theory than appears to exist at present. New data are presented concerning representative contact combinations. These comprise various carborundum combinations, the carborundum ceramic non-linear resistor, the cuprous oxide and selenium rectifiers, and the diamond. Measurements have been made of the variation of the characteristic parameters, resistance and capacitance, with each of the four significant variables¿current, mechanical pressure, thickness of semiconductor and temperature. The ranges of current and voltage far exceed those which have been employed hitherto. Examinaion of the results obtained then leads to various conclusions regarding the mechanism of contact non-linearity, but not, however, to conflict with the familiar ¿barrier layer¿ hypothesis. This concept is fully supported by the work described, but it is suggested that conventional ideas regarding the constitution of such a layer require some clarification.