Selenium Segregation for Effective Schottky Barrier Height Reduction in NiGe/n–Ge Contacts

Author

Tong, Yi ; Liu, Bin ; Lim, Phyllis Shi Ya ; Yeo, Yee-Chia

Author_Institution

Dept. of Electr. & Comput. Eng., Nat. Univ. of Singapore, Singapore, Singapore

Volume

33

Issue

6

fYear

2012

fDate

6/1/2012 12:00:00 AM

Firstpage

773

Lastpage

775

Abstract

In this letter, we report the demonstration of an effective electron Schottky barrier height (Φ_Bⁿ) reduction technology for NiGe/n-type Germanium (n-Ge) contacts using ion implantation of selenium (Se) followed by its segregation at NiGe/n-Ge interface. Se was found to segregate at NiGe/n-Ge interface after germanide formation. Nickel monogermanide was formed using a 350°C 30-s anneal. Se segregation gives Φ_Bⁿ as low as ~0.13 eV.

Keywords

Schottky barriers; annealing; electrical contacts; elemental semiconductors; germanium; ion implantation; nickel alloys; segregation; selenium; NiGe-Ge; NiGe-n-type germanium contact; Se; annealing; effective Schottky barrier height reduction technology; electrical contact; germanide formation; ion implantation; nickel monogermanide; selenium segregation; temperature 350 degC; time 30 s; Annealing; Electron traps; Implants; Nickel; Schottky barriers; Nickel germanide (NiGe); Schottky barrier height; segregation; selenium implant;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/LED.2012.2191760

Filename

6194264