Influence of hydrodynamic models on the prediction of submicrometer device characteristics

Author

Ieong, Meikei ; Tang, Ting-wei

Author_Institution

SRDC, IBM Corp., Hopewell Junction, NY, USA

Volume

44

Issue

12

fYear

1997

fDate

12/1/1997 12:00:00 AM

Firstpage

2242

Lastpage

2251

Abstract

The influence of different hydrodynamic models on the prediction of submicron device characteristics is studied using the General Hydrodynamic Equation solver. We analyze the simulation results of various structures of Silicon-on-insulator (SOI) Metal-Oxide-Semiconductor Field-Effect-Transistors (MOSFETs) and silicon germanium (SiGe) Heterostructure Bipolar Transistors (HBTs). When the size of devices is reduced to the submicron regime, the current drive of a SOI-MOSFET is enhanced mainly by the nonlocal effect. However, the current drive of a HBT is reduced by the dominant thermal back-diffusion effect. The sensitivity of predicted device characteristics on various transport parameters is also discussed

Keywords

MOSFET; heterojunction bipolar transistors; semiconductor device models; silicon-on-insulator; thermal diffusion; HBTs; SOI MOSFETs; current drive; dominant thermal back-diffusion effect; general hydrodynamic equation solver; hydrodynamic models; nonlocal effect; submicrometer device characteristics; transport parameters; Analytical models; Bipolar transistors; Differential equations; Germanium silicon alloys; Heterojunction bipolar transistors; Hydrodynamics; MOSFETs; Predictive models; Silicon germanium; Silicon on insulator technology;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.644644

Filename

644644