Title :
Investigation of FECTED performance for millimeter-wave applications
Author :
Driouch, Fouad ; Dalle, Christophe
Author_Institution :
Dept. Hyperfrequences et Semicond., Inst. d´´Electron. et de Microelectron. du Nord, Villeneuve d´´Ascq, France
fDate :
7/1/2001 12:00:00 AM
Abstract :
The potential of GaAs, Ga0.47In0.53As, and InP field-effect cathode transferred-electron device (FECTED) oscillators is theoretically investigated at millimeter wave. The modeling relies on a general time-domain electronic circuit simulator including a quasi-two-dimensional bipolar hydrodynamic FECTED model. Pure sine simulations have been performed to optimize the device structure and performance at various typical frequencies in a self-consistent manner, together with thermal and electronic limitations. The optimization is focused on a reliable and high negative resistance level device based on a dipolar-layer single transit mode. By means of transient simulations, we next demonstrate the feasibility of simple front-end FECTED circuits for short-range pulsed and frequency-modulation continuous-wave millimeter-wave radars
Keywords :
Gunn oscillators; circuit simulation; millimetre wave field effect transistors; millimetre wave oscillators; negative resistance devices; semiconductor device models; time-domain analysis; FECTED; Ga0.47In0.53As; GaAs; InP; design optimization; field effect cathode transferred electron device; frequency-modulation continuous-wave millimeter-wave radar; front-end circuit; millimeter-wave oscillator; negative resistance; quasi-two-dimensional bipolar hydrodynamic model; short-range pulsed millimeter-wave radar; time domain circuit simulation; transient simulation; Cathodes; Circuit simulation; Electronic circuits; Frequency; Gallium arsenide; Indium phosphide; Millimeter wave circuits; Millimeter wave devices; Oscillators; Time domain analysis;
Journal_Title :
Microwave Theory and Techniques, IEEE Transactions on
