Title :
AlGaN/GaN HEMTs grown on SiC substrates
Author :
Binari, S.C. ; Redwing, J.M. ; Kelner, G. ; Kruppa, W.
Author_Institution :
Naval Res. Lab., Washington, DC, USA
fDate :
1/30/1997 12:00:00 AM
Abstract :
The fabrication and characterisation of AlGaN/GaN HEMTs grown on SiC substrates are described. These devices have a transconductance of 70 mS/mm and a gate breakdown voltage in excess of 100V. The HEMTs have a hard pinch-off with nearly ideal subthreshold characteristics. An f T of 6 GHz and an fmax of 11 GHz were measured for 1 μm gate length devices
Keywords :
III-V semiconductors; aluminium compounds; characteristics measurement; electron mobility; gallium compounds; power HEMT; 1 micron; 11 GHz; 6 GHz; AlGaN-GaN; HEMTs; SiC; gate breakdown voltage; gate length; hard pinch-off; nearly ideal subthreshold characteristics; transconductance;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19970122
