Title :
Analytical modelling of thermally-activated transport in SiC inversion layers [MOSFETs]
Author :
Bano, E. ; Ouisse, T. ; Scharnholz, S.P. ; Gölz, A. ; Von Kamienski, E. G Stein
Author_Institution :
Lab. de Physique des Composants a Semicond., CNRS, Grenoble, France
fDate :
1/30/1997 12:00:00 AM
Abstract :
When the conductivity of a silicon carbide (SiC) inversion layer is thermally activated it is confirmed that the activation energy controlling transport is almost inversely proportional to the electron concentration. Simple formulas are then derived For expressing the apparent surface mobility and the threshold voltage. The mobility is proportional to the temperature
Keywords :
MOSFET; carrier density; electron mobility; inversion layers; semiconductor device models; semiconductor materials; silicon compounds; MOSFETs; SiC; activation energy; apparent surface mobility; electron concentration; inversion layers; thermally-activated transport; threshold voltage;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19970116
