DocumentCode
1507622
Title
Analytical modelling of thermally-activated transport in SiC inversion layers [MOSFETs]
Author
Bano, E. ; Ouisse, T. ; Scharnholz, S.P. ; Gölz, A. ; Von Kamienski, E. G Stein
Author_Institution
Lab. de Physique des Composants a Semicond., CNRS, Grenoble, France
Volume
33
Issue
3
fYear
1997
fDate
1/30/1997 12:00:00 AM
Firstpage
243
Lastpage
245
Abstract
When the conductivity of a silicon carbide (SiC) inversion layer is thermally activated it is confirmed that the activation energy controlling transport is almost inversely proportional to the electron concentration. Simple formulas are then derived For expressing the apparent surface mobility and the threshold voltage. The mobility is proportional to the temperature
Keywords
MOSFET; carrier density; electron mobility; inversion layers; semiconductor device models; semiconductor materials; silicon compounds; MOSFETs; SiC; activation energy; apparent surface mobility; electron concentration; inversion layers; thermally-activated transport; threshold voltage;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19970116
Filename
575960
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