• DocumentCode
    1507628
  • Title

    Broad-area photoelectrochemical etching of GaN

  • Author

    Youtsey, C. ; Adesida, I. ; Bulman, G.

  • Author_Institution
    Dept. of Electr. & Comput. Eng., Illinois Univ., Urbana, IL, USA
  • Volume
    33
  • Issue
    3
  • fYear
    1997
  • fDate
    1/30/1997 12:00:00 AM
  • Firstpage
    245
  • Lastpage
    246
  • Abstract
    A photoenhanced wet chemical etching process for GaN using KOH solution and broad-area Hg lamp illumination is demonstrated. Results are discussed for n+ GaN, non-intentionally doped GaN, and p-GaN samples
  • Keywords
    photoelectrochemistry; GaN; broad-area Hg lamp illumination; broad-area photoelectrochemical etching; photoenhanced wet chemical etching process; sample masking;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19970121
  • Filename
    575962
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1507628