Title :
Characterization of thermal and frequency-dispersion effects in GaAs MESFET devices
Author :
Rodriguez-Tellez, J. ; Fernandez, T. ; Mediavilla, A. ; Tazon, A.
Author_Institution :
Dept. of Electr. Eng., Bradford Univ., UK
fDate :
7/1/2001 12:00:00 AM
Abstract :
New simple and accurate measurement procedures that enable the dispersion and thermal effects in GaAs MESFETs to be observed independently are presented in this paper. The results indicate that the differences observed between the static and pulsed characteristics of the device are not solely due to thermal effects, as is sometimes thought. Electrical and thermal measurements also show the GaAs MESFET to take a relatively long time before the effect of self-heating manifests itself on the IV characteristics of the device
Keywords :
III-V semiconductors; Schottky gate field effect transistors; gallium arsenide; semiconductor device measurement; GaAs; GaAs MESFET; I-V characteristics; frequency dispersion; pulsed characteristics; self-heating; semiconductor device measurement; static characteristics; thermal effects; Current measurement; Dispersion; Frequency measurement; Gallium arsenide; MESFETs; Performance evaluation; Pulse measurements; Software measurement; Temperature measurement; Time measurement;
Journal_Title :
Microwave Theory and Techniques, IEEE Transactions on
