Characterization of thermal and frequency-dispersion effects in GaAs MESFET devices

Author

Rodriguez-Tellez, J. ; Fernandez, T. ; Mediavilla, A. ; Tazon, A.

Author_Institution

Dept. of Electr. Eng., Bradford Univ., UK

Volume

49

Issue

7

fYear

2001

fDate

7/1/2001 12:00:00 AM

Firstpage

1352

Lastpage

1355

Abstract

New simple and accurate measurement procedures that enable the dispersion and thermal effects in GaAs MESFETs to be observed independently are presented in this paper. The results indicate that the differences observed between the static and pulsed characteristics of the device are not solely due to thermal effects, as is sometimes thought. Electrical and thermal measurements also show the GaAs MESFET to take a relatively long time before the effect of self-heating manifests itself on the IV characteristics of the device

Keywords

III-V semiconductors; Schottky gate field effect transistors; gallium arsenide; semiconductor device measurement; GaAs; GaAs MESFET; I-V characteristics; frequency dispersion; pulsed characteristics; self-heating; semiconductor device measurement; static characteristics; thermal effects; Current measurement; Dispersion; Frequency measurement; Gallium arsenide; MESFETs; Performance evaluation; Pulse measurements; Software measurement; Temperature measurement; Time measurement;

fLanguage

English

Journal_Title

Microwave Theory and Techniques, IEEE Transactions on

Publisher

ieee

ISSN

0018-9480

Type

jour

DOI

10.1109/22.932259

Filename

932259