Title :
A collector-up AlGaAs/GaAs heterojunction bipolar transistor fabricated using three-stage MOCVD
Author :
Kawai, H. ; Kobayashi, Takehiko ; Kaneko, K.
Author_Institution :
Sony Corp. Res. Center, Yokohama, Japan
Abstract :
A new collector-up AlGaAs/GaAs heterojunction bipolar transistor (HBT) is reported. This structure is designed to minimize parasitic capacitance and to eliminate trenches for making contacts. The emitter, external base, and intrinsic base and collector have been grown in three stages using metalorganic chemical vapor deposition (MOCVD). The current gain of this collector-up HBT (C-up HBT) with a 5*14- mu m/sup 2/ collector is 15.<>
Keywords :
III-V semiconductors; aluminium compounds; bipolar transistors; chemical vapour deposition; gallium arsenide; AlGaAs-GaAs; collector-up; current gain; emitter; external base; heterojunction bipolar transistor; intrinsic base; parasitic capacitance; three-stage MOCVD; trenches; Bipolar transistors; Buffer layers; Chemical vapor deposition; Fabrication; Gallium arsenide; Heterojunction bipolar transistors; Hydrogen; MOCVD; Parasitic capacitance; Wet etching;
Journal_Title :
Electron Device Letters, IEEE
