DocumentCode
1507637
Title
A collector-up AlGaAs/GaAs heterojunction bipolar transistor fabricated using three-stage MOCVD
Author
Kawai, H. ; Kobayashi, Takehiko ; Kaneko, K.
Author_Institution
Sony Corp. Res. Center, Yokohama, Japan
Volume
9
Issue
8
fYear
1988
Firstpage
419
Lastpage
421
Abstract
A new collector-up AlGaAs/GaAs heterojunction bipolar transistor (HBT) is reported. This structure is designed to minimize parasitic capacitance and to eliminate trenches for making contacts. The emitter, external base, and intrinsic base and collector have been grown in three stages using metalorganic chemical vapor deposition (MOCVD). The current gain of this collector-up HBT (C-up HBT) with a 5*14- mu m/sup 2/ collector is 15.<>
Keywords
III-V semiconductors; aluminium compounds; bipolar transistors; chemical vapour deposition; gallium arsenide; AlGaAs-GaAs; collector-up; current gain; emitter; external base; heterojunction bipolar transistor; intrinsic base; parasitic capacitance; three-stage MOCVD; trenches; Bipolar transistors; Buffer layers; Chemical vapor deposition; Fabrication; Gallium arsenide; Heterojunction bipolar transistors; Hydrogen; MOCVD; Parasitic capacitance; Wet etching;
fLanguage
English
Journal_Title
Electron Device Letters, IEEE
Publisher
ieee
ISSN
0741-3106
Type
jour
DOI
10.1109/55.764
Filename
764
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