Title :
Quantum confined Stark effect in GaInAsSb/AlGaAsSb quantum wells grown by molecular beam epitaxy
Author :
Shi, Y. ; Zhao, J.H. ; Sarathy, J. ; Olsen, G. ; Lee, H.
Author_Institution :
Dept. of Electr. & Comput. Eng., Rutgers Univ., Piscataway, NJ, USA
fDate :
1/30/1997 12:00:00 AM
Abstract :
The quantum confined Stark effect in GaInAsSb/AlGaAsSb strain compensated multiquantum well structures grown by molecular beam epitaxy on GaSb substrates has been successfully demonstrated for the first time. A large absorption peak shift up to 80 nm was observed. The excitonic absorption peak shifts agree well with the calculated results
Keywords :
III-V semiconductors; aluminium compounds; excitons; gallium arsenide; gallium compounds; indium compounds; molecular beam epitaxial growth; quantum confined Stark effect; semiconductor quantum wells; GaInAsSb-AlGaAsSb; GaSb; absorption peak shift; excitonic absorption peak; molecular beam epitaxy; quantum confined Stark effect; strain compensated multiquantum well structures;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19970141
