DocumentCode :
150793
Title :
Turn-off voltage sharing of field stop IGBTs in series connection
Author :
Xueqiang Zhang ; Xin Yang ; Jin Zhang ; Weiwei He ; Palmer, Patrick R.
Author_Institution :
Dept. of Eng., Univ. of Cambridge, Cambridge, UK
fYear :
2014
fDate :
14-18 Sept. 2014
Firstpage :
1959
Lastpage :
1966
Abstract :
Insulated Gate Bipolar Transistors (IGBTs) have become increasingly important in modern high power systems. Due to limits in silicon properties and processing technologies, the blocking voltage of a single power device is usually limited compared to the typical grid systems operating voltage. To support a higher DC link voltage, power devices such as IGBTs can be connected in series. However, because of inevitable parameter variations and random systemic errors in the power semiconductor devices and the control system, a balanced voltage sharing between devices is often difficult to achieve. In this paper, the voltage sharing of Field Stop (FS) IGBTs connected in series during turn-off is analysed. Parameter variations are categorised and simplified for an easier understanding and for clarification, and are simulated in Silvaco ATLAS. Methods to improve the voltage sharing for FS IGBTs in series connection are discussed.
Keywords :
insulated gate bipolar transistors; power semiconductor devices; DC link voltage; FS IGBT; Silvaco ATLAS; balanced voltage sharing; control system; field stop IGBT; insulated gate bipolar transistors; power device; power devices; power semiconductor devices; power systems; random systemic errors; series connection; silicon properties; turn-off voltage sharing; Buffer layers; Delays; Doping; Electric fields; Insulated gate bipolar transistors; Logic gates; Voltage control;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Energy Conversion Congress and Exposition (ECCE), 2014 IEEE
Conference_Location :
Pittsburgh, PA
Type :
conf
DOI :
10.1109/ECCE.2014.6953659
Filename :
6953659
Link To Document :
بازگشت