DocumentCode :
150794
Title :
Over-current protection scheme for SiC power MOSFET DC circuit breaker
Author :
Yuan Zhang ; Liang, Yung C.
Author_Institution :
Dept. of Electr. & Comput. Eng., Nat. Univ. of Singapore, Singapore, Singapore
fYear :
2014
fDate :
14-18 Sept. 2014
Firstpage :
1967
Lastpage :
1971
Abstract :
The electronic circuit breaker used in DC microgrids are required to work within their safe operating areas bounded by temperature, voltage and current limits. Traditional approach managed to protect these switches through rapid current cut-off operations at over-load or fault situations, but failing to avoid the disturbance induced by transient current surges or noises which are not harmful to the grid operations. Aiming to increase the quality of circuit breaker operations and furthermore improve its reliability, this paper proposed a SiC MOSFET based DC circuit breaker based on the variable time-delay protection scheme. The cutoff operations only take place after proper delay time, which are precisely catered according to the transient thermal properties of SiC devices and the properties of DC loads. The proposed scheme has been implemented with hardware prototype and experimentally verified under different fault situations.
Keywords :
circuit breakers; current limiters; delays; distributed power generation; field effect transistor switches; overcurrent protection; silicon compounds; thermal properties; wide band gap semiconductors; DC circuit breaker; DC microgrids; SiC; SiC power MOSFET; current limits; electronic circuit breaker; overcurrent protection; transient current; transient thermal properties; variable time-delay protection scheme; voltage limits; Circuit faults; Delays; Fault currents; MOSFET; Resistance; Silicon carbide; Transient analysis;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Energy Conversion Congress and Exposition (ECCE), 2014 IEEE
Conference_Location :
Pittsburgh, PA
Type :
conf
DOI :
10.1109/ECCE.2014.6953660
Filename :
6953660
Link To Document :
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