Laser-diode pumping of waveguide laser based on Nd-doped silica planar lightwave circuit

Author

Hattori, Kuninori ; Kitagawa, Takeshi ; Ohmori, Yasuji ; Kobayashi, Morio

Author_Institution

NTT Opto-Electron. Lab., Ibaraki, Japan

Volume

3

Issue

10

fYear

1991

Firstpage

882

Lastpage

884

Abstract

The authors describes an improvement in the lasing threshold in Nd-doped silica planar-lightwave-circuit (PLC)-type lasers fabricated on Si substrates in which the scattering loss was reduced by an improved fabrication technique. Lasers with core widths from 6 to 30 mu m were fabricated by flame hydrolysis deposition and reactive ion etching techniques. Based on an investigation of the lasing threshold dependence on core width, a minimum lasing threshold was obtained in a waveguide laser with an 8 mu m wide core. A threshold of 25 mW and a slope efficiency of 1.2% for laser-diode pumping at 805 nm were obtained in the waveguide laser.<>

Keywords

integrated optics; neodymium; optical pumping; optical waveguides; silicon compounds; solid lasers; 25 mW; 6 to 30 micron; 805 nm; Nd-doped silica planar lightwave circuit; Si substrates; SiO/sub 2/:Nd; SiO/sub 2/:Nd-Si; core widths; flame hydrolysis deposition; improved fabrication technique; integrated optics; laser diode pumping; lasing threshold; lasing threshold dependence; reactive ion etching techniques; scattering loss; slope efficiency; threshold; waveguide laser; Circuits; Etching; Fires; Laser excitation; Light scattering; Optical device fabrication; Planar waveguides; Pump lasers; Silicon compounds; Waveguide lasers;

fLanguage

English

Journal_Title

Photonics Technology Letters, IEEE

Publisher

ieee

ISSN

1041-1135

Type

jour

DOI

10.1109/68.93249

Filename

93249