A novel modulation scheme in semiconductor light emitters with quantum microcavities: high speed intensity modulation by switching of coupling efficiency of spontaneous emission

Author

Yamanishi, Masamichi ; Yamamoto, Yoshihisa ; Shiotani, Tsutomu

Author_Institution

Dept. of Phys. Electron., Hiroshima Univ., Japan

Volume

3

Issue

10

fYear

1991

Firstpage

888

Lastpage

890

Abstract

A modulation of coupling efficiency of spontaneous emission is proposed theoretically to result in an ultrawideband modulation of spontaneous output intensity in semiconductor light-emitting devices with quantum microcavities. The proposed modulation scheme does not involve changes in carrier population, but relies purely on the modulation of the coupling efficiency of spontaneous emission caused by electric-field-induced tuning of emission wavelength. An extremely wideband modulation is predicted, showing a cutoff frequency over 10/sup 11/ Hz and being completely free of recombination lifetime limitation.<>

Keywords

laser cavity resonators; light emitting diodes; optical modulation; semiconductor junction lasers; LED mode operation; coupling efficiency; cutoff frequency; electric-field-induced tuning; emission wavelength; high speed intensity modulation; light emitting triode; modulation scheme; quantum microcavities; semiconductor lasers; semiconductor light emitters; spontaneous emission; spontaneous output intensity; switching; wideband modulation; Cutoff frequency; Intensity modulation; Light emitting diodes; Microcavities; Optical coupling; Optical modulation; Quantum mechanics; Spontaneous emission; Tuning; Ultra wideband technology;

fLanguage

English

Journal_Title

Photonics Technology Letters, IEEE

Publisher

ieee

ISSN

1041-1135

Type

jour

DOI

10.1109/68.93251

Filename

93251