Observation of field-induced refractive index variation in quantum box structure

Author

Aizawa, Takuya ; Shimomura, Kazuhiko ; Arai, Shigehisa ; Suematsu, Yasuharu

Author_Institution

Dept. of Phys. Electron., Tokyo Inst. of Technol., Japan

Volume

3

Issue

10

fYear

1991

Firstpage

907

Lastpage

909

Abstract

An electric-field-induced refractive index variation in a GaInAs/InP five-layered quantum box structure was observed for the first time. The wavelength dependence of the refractive index variation was measured to confirm the quantum box effect. The size of the GaInAs/InP quantum box was estimated to be (22-30 nm)/sup 2/ with the thickness of 7.5 nm. from the spectral property of the field-induced refractive index variation. The maximum value of the refractive index variation in the quantum box was evaluated to be 7% around 1.52 mu m wavelength at an applied electric field of 8*10/sup 4/ V/Cm.<>

Keywords

III-V semiconductors; electro-optical effects; gallium arsenide; indium compounds; refractive index; semiconductor quantum dots; 7.5 nm; GaInAs-InP quantum box structure; III-V semiconductors; applied electric field; electric-field-induced refractive index variation; spectral property; thickness; wavelength dependence; Buffer layers; Indium phosphide; Lithography; Optical films; Optical interferometry; Optical switches; Quantum mechanics; Refractive index; Wet etching; Wire;

fLanguage

English

Journal_Title

Photonics Technology Letters, IEEE

Publisher

ieee

ISSN

1041-1135

Type

jour

DOI

10.1109/68.93258

Filename

93258