Title :
Observation of field-induced refractive index variation in quantum box structure
Author :
Aizawa, Takuya ; Shimomura, Kazuhiko ; Arai, Shigehisa ; Suematsu, Yasuharu
Author_Institution :
Dept. of Phys. Electron., Tokyo Inst. of Technol., Japan
Abstract :
An electric-field-induced refractive index variation in a GaInAs/InP five-layered quantum box structure was observed for the first time. The wavelength dependence of the refractive index variation was measured to confirm the quantum box effect. The size of the GaInAs/InP quantum box was estimated to be (22-30 nm)/sup 2/ with the thickness of 7.5 nm. from the spectral property of the field-induced refractive index variation. The maximum value of the refractive index variation in the quantum box was evaluated to be 7% around 1.52 mu m wavelength at an applied electric field of 8*10/sup 4/ V/Cm.<>
Keywords :
III-V semiconductors; electro-optical effects; gallium arsenide; indium compounds; refractive index; semiconductor quantum dots; 7.5 nm; GaInAs-InP quantum box structure; III-V semiconductors; applied electric field; electric-field-induced refractive index variation; spectral property; thickness; wavelength dependence; Buffer layers; Indium phosphide; Lithography; Optical films; Optical interferometry; Optical switches; Quantum mechanics; Refractive index; Wet etching; Wire;
Journal_Title :
Photonics Technology Letters, IEEE
