Title :
High-speed 1.3 μm GaInAsP p-substrate buried-crescent lasers with semi-insulating Fe/Ti-doped InP current blocking layers
Author :
Zah, C.E. ; Caneau, Catherine ; Menocal, S.G. ; Favire, F. ; Lee, T.P. ; Dentai, A.G. ; Joyner, Charles H.
Author_Institution :
Bell Commun. Res. Inc., Red Bank, NJ
fDate :
5/26/1988 12:00:00 AM
Abstract :
High-speed 1.3 μm GaInAsP buried-crescent lasers were made with a MOVPE-grown semi-insulating Fe/Ti-doped InP current-blocking layer on p-InP substrate. Ti, a deep-level donor, was used to compensate Zn outdiffusion from the buffer layer during the LPE regrowth. Devices with broad area contacts had a modulation bandwidth of 11 GHz, a low threshold current of 11 mA, and an output power of 23 mW per facet
Keywords :
III-V semiconductors; gallium arsenide; gallium compounds; indium compounds; laser transitions; liquid phase epitaxial growth; optical communication equipment; semiconductor junction lasers; vapour phase epitaxial growth; 1.3 micron; 11 GHz; 23 mW; GaInAsP-InP:Fe,Ti; III-V semiconductor; LPE regrowth; MOVPE grown blocking layer; Zn outdiffusion compensation; broad area contacts; buffer layer; buried-crescent lasers; current-blocking layer; deep-level donor; high speed semiconductor lasers; modulation bandwidth; optical communication equipment; p-type InP substrate; semiinsulating Fe/Ti doped InP; threshold current;
Journal_Title :
Electronics Letters
