Title :
Very-high-bandwidth In/sub 0.53/Ga/sub 0.47/As p-i-n detector arrays
Author :
Lui, Yunlei ; Forrest, S.R. ; Tangonan, G.L. ; Jullens, R.A. ; Loo, R.Y. ; Jones, V.L. ; Persechini, D. ; Pikulski, J.L. ; Johnson, M.M.
Author_Institution :
Dept. of Electr. Eng., Univ. of Southern California, Los Angeles, CA, USA
Abstract :
The authors fabricated and packaged 1*4 arrays of In/sub 0.53/Ga/sub 0.47/As p-i-n photodetectors connected in a GaAs FET bias-switched, common cathode circuit. The bandwidth of the discrete (packaged) photodiodes in the arrays exceeds 11 GHz, and is 5 GHz for the packaged arrays. The on/off isolation ratio for fully packaged arrays using GaAs FET bias switches was measured at both low and high frequencies. It was found that the on/off isolation of the detectors in the array was 70 dB, and the bias switching times were less than 5 ns. The performance characteristics suggest that the p-i-n detector arrays used in a common cathode, current summing configuration have applications for high-freqeuncy digital and analog optical switching applications.<>
Keywords :
III-V semiconductors; field effect integrated circuits; gallium arsenide; indium compounds; infrared detectors; integrated optoelectronics; optical communication equipment; p-i-n diodes; photodiodes; 1.3 micron; 1.55 micron; 11 GHz; 5 GHz; FET bias switched common cathode circuit; GaAs; III-V semiconductors; In/sub 0.53/Ga/sub 0.47/As; In/sub 0.53/Ga/sub 0.47/As p-i-n photodetectors; analog optical switching applications; bandwidth; bias switching times; current summing configuration; high frequency digital optical switching; on/off isolation ratio; packaged arrays; performance characteristics; Bandwidth; Cathodes; Circuits; FETs; Gallium arsenide; Optical arrays; PIN photodiodes; Packaging; Photodetectors; Sensor arrays;
Journal_Title :
Photonics Technology Letters, IEEE
