Switching transient analysis of a metal/ferroelectric/semiconductor switch diode with high speed response to infrared light

Author

Chen, Jiann-Ruey ; Ho, Jyh-Jier ; Fang, Y.K. ; Shu, C.Y. ; Hsu, Chin-Yuan ; Jiann-Ruey Chen ; Ju, M.S.

Author_Institution

Dept. of Electr. Eng., Nat. Cheng Kung Univ., Tainan, Taiwan

Volume

46

Issue

3

fYear

1999

fDate

5/1/1999 12:00:00 AM

Firstpage

502

Lastpage

510

Abstract

A thin PbTiO/sub 3/-n-p/sup +/ silicon switch diode has been developed, in which the switching voltage (the turned-on voltage) changes in proportion to the infrared light power. The diode has a rapid response time of 0.65 /spl mu/s compared with other conventional infrared sensors. It is attributed to the rapid switching device structure and the smaller pyroelectric layer thickness, 50 nm. In this paper, we have analyzed the rapid switching transient response by using heat conduction and switching theory successfully. The experimental results are in agreement with the theoretical analysis.

Keywords

MIS devices; ferroelectric devices; ferroelectric switching; high-speed optical techniques; infrared detectors; lead compounds; photodiodes; pyroelectric detectors; semiconductor switches; transient analysis; 0.65 mus; PbTiO/sub 3/-Si; heat conduction; high speed response; infrared sensor; metal/ferroelectric/semiconductor switch diode; pyroelectric detector; switching transient analysis; Delay; Ferroelectric materials; Infrared sensors; Power semiconductor switches; Pyroelectricity; Semiconductor diodes; Silicon; Transient analysis; Transient response; Voltage;

fLanguage

English

Journal_Title

Ultrasonics, Ferroelectrics, and Frequency Control, IEEE Transactions on

Publisher

ieee

ISSN

0885-3010

Type

jour

DOI

10.1109/58.764835

Filename

764835