Title :
PbTiO/sub 3/ films from metalloorganic precursors
Author :
Vest, Robert W. ; Xu Jiejie
Author_Institution :
Turner Lab., Purdue Univ., West Lafayette, IN, USA
Abstract :
Ferroelectric PbTiO/sub 3/ films 0.5- to 2.0- mu m thick were prepared by the metalloorganic decomposition (MOD) process using multilayer spinning with firing temperatures of 490-630 degrees C. The temperature dependence of the dielectric constant was found to be a function of the c/a ratio, which could be modified by control of either the single-layer thickness or the strength of the electric field during film preparation near the Curie temperature. The films were near theoretical density and defect-free over 2 cm*2 cm areas.<>
Keywords :
ferroelectric thin films; lead compounds; permittivity; 0.5 to 2 micron; 490 to 630 degC; Curie temperature; PbTiO/sub 3/ films; density; dielectric constant; ferroelectric thin films; firing temperatures; metalloorganic decomposition; multilayer spinning; Bismuth; Crystals; Ferroelectric films; Ferroelectric materials; Lead; Piezoelectric films; Radio frequency; Sputtering; Substrates; Temperature;
Journal_Title :
Ultrasonics, Ferroelectrics, and Frequency Control, IEEE Transactions on
