Title :
Reproducible fabrication of AlGaAs/GaAs circular buried heterostructure (CBH) surface-emitting lasers with low thresholds
Author :
Kinoshita, Shosuke ; Morito, Ken ; Koyama, Fumio ; Iga, Kenichi
Author_Institution :
Tokyo Inst. of Technol., Yokohama
fDate :
5/26/1988 12:00:00 AM
Abstract :
The fabrication process for circular buried-heterostructure surface-emitting lasers has been improved to increase the uniformity of the active region diameter. Circular mesas of ≃8 μm diameter can now be consistently prepared and low-threshold surface-emitting lasers (30-60 mA at room temperature pulsed conditions) are obtained
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; liquid phase epitaxial growth; semiconductor growth; semiconductor junction lasers; 30 to 60 mA; 8 micron; AlGaAs-GaAs; CBH; III-V semiconductors; LPE regrowth process; circular buried heterostructure; circular mesas; fabrication process; low thresholds; room temperature pulsed conditions; semiconductor lasers; surface-emitting lasers;
Journal_Title :
Electronics Letters
