DocumentCode
1508372
Title
Reproducible fabrication of AlGaAs/GaAs circular buried heterostructure (CBH) surface-emitting lasers with low thresholds
Author
Kinoshita, Shosuke ; Morito, Ken ; Koyama, Fumio ; Iga, Kenichi
Author_Institution
Tokyo Inst. of Technol., Yokohama
Volume
24
Issue
11
fYear
1988
fDate
5/26/1988 12:00:00 AM
Firstpage
699
Lastpage
700
Abstract
The fabrication process for circular buried-heterostructure surface-emitting lasers has been improved to increase the uniformity of the active region diameter. Circular mesas of ≃8 μm diameter can now be consistently prepared and low-threshold surface-emitting lasers (30-60 mA at room temperature pulsed conditions) are obtained
Keywords
III-V semiconductors; aluminium compounds; gallium arsenide; liquid phase epitaxial growth; semiconductor growth; semiconductor junction lasers; 30 to 60 mA; 8 micron; AlGaAs-GaAs; CBH; III-V semiconductors; LPE regrowth process; circular buried heterostructure; circular mesas; fabrication process; low thresholds; room temperature pulsed conditions; semiconductor lasers; surface-emitting lasers;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
Filename
5762
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