DocumentCode :
1508383
Title :
Microcantilever with integrated light-emitting Schottky barrier avalanche breakdown diodes
Author :
Maniscalco, N.I. ; Ko, K.D. ; Toussaint, Kimani C. ; King, William P.
Author_Institution :
Dept. of Mech. Sci. & Eng., Univ. of Illinois, Urbana-Champaign, Urbana, IL, USA
Volume :
7
Issue :
4
fYear :
2012
fDate :
4/1/2012 12:00:00 AM
Firstpage :
314
Lastpage :
316
Abstract :
The design, fabrication and characterisation of a microcantilever having two back-to-back light-emitting Pt-Si Schottky diodes fabricated near the cantilever free end is reported. Visible light is emitted from the Schottky barrier junctions under reverse bias. The diodes breakdown at a voltage of 100-V and during breakdown the diodes emit light with a peak wavelength near 710-nm. This approach for integrating a light-emitting Schottky diode onto a microcantilever could be used to introduce light into scanning probe or sensing measurements.
Keywords :
Schottky barriers; Schottky diodes; avalanche breakdown; cantilevers; elemental semiconductors; light emitting diodes; micromechanical devices; platinum; silicon; Pt-Si; avalanche breakdown diodes; integrated light-emitting Schottky barrier; light-emitting Pt-Si Schottky diodes; microcantilever; peak wavelength; scanning probe; sensing measurements; visible light; voltage 100 V;
fLanguage :
English
Journal_Title :
Micro & Nano Letters, IET
Publisher :
iet
ISSN :
1750-0443
Type :
jour
DOI :
10.1049/mnl.2011.0708
Filename :
6194414
Link To Document :
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