Title :
Degradation of tunnel-thin silicon dioxide films
Author :
Grekhov, I.V. ; Shulekin, A.F. ; Vexler, M.I.
Author_Institution :
A.F. Ioffe Physicotech. Inst., Acad. of Sci., St. Petersburg, Russia
fDate :
12/1/1997 12:00:00 AM
Abstract :
The transition of a charge transport mechanism in ultrathin (2-3 mn) SiO2 films from Fowler-Nordheim injection to direct tunneling was found to result in the enhancement of a charge-to-degradation from ~103 to ~107 C/cm2 . Tunnel MOS structures were examined at high current density (200-1000 A/cm2)
Keywords :
MIS devices; current density; dielectric thin films; semiconductor device reliability; silicon compounds; tunnelling; 2 to 3 nm; Fowler-Nordheim injection; SiO2; charge transport mechanism; direct tunneling; high current density; tunnel MOS structure; tunnel-thin films; ultrathin SiO2 films; Current density; Degradation; Insulation; MOS devices; MOSFETs; Semiconductor films; Silicon compounds; Threshold voltage; Thyristors; Tunneling;
Journal_Title :
Electron Devices, IEEE Transactions on
