• DocumentCode
    1508538
  • Title

    Degradation of tunnel-thin silicon dioxide films

  • Author

    Grekhov, I.V. ; Shulekin, A.F. ; Vexler, M.I.

  • Author_Institution
    A.F. Ioffe Physicotech. Inst., Acad. of Sci., St. Petersburg, Russia
  • Volume
    44
  • Issue
    12
  • fYear
    1997
  • fDate
    12/1/1997 12:00:00 AM
  • Firstpage
    2307
  • Lastpage
    2308
  • Abstract
    The transition of a charge transport mechanism in ultrathin (2-3 mn) SiO2 films from Fowler-Nordheim injection to direct tunneling was found to result in the enhancement of a charge-to-degradation from ~103 to ~107 C/cm2 . Tunnel MOS structures were examined at high current density (200-1000 A/cm2)
  • Keywords
    MIS devices; current density; dielectric thin films; semiconductor device reliability; silicon compounds; tunnelling; 2 to 3 nm; Fowler-Nordheim injection; SiO2; charge transport mechanism; direct tunneling; high current density; tunnel MOS structure; tunnel-thin films; ultrathin SiO2 films; Current density; Degradation; Insulation; MOS devices; MOSFETs; Semiconductor films; Silicon compounds; Threshold voltage; Thyristors; Tunneling;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/16.644661
  • Filename
    644661
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1508538