Magnetoresistance in spin-valves with antiferromagnetic NiO/CuO/NiO trilayers

Author

Lee, S.S. ; Hwang, D.G. ; Park, C.M. ; Lee, K.A.

Author_Institution

Dept. of Phys., SangJi Univ., Wonju, South Korea

Volume

33

Issue

5

fYear

1997

fDate

9/1/1997 12:00:00 AM

Firstpage

3547

Lastpage

3549

Abstract

Magnetoresistance and exchange coupling in spin-valve films using antiferromagnetic NiO/CuO/NiO trilayers were investigated. The exchange coupling field H_ex and MR ratio in the NiO_{300 Å}/CuO_{300 Å}/NiO_{300 Å}/NiFe_{50 Å}/Cu_{20 Å}/NiFe_{50 Å} films were almost constant values of 100 Oe and 4.5% despite of the variation of the inserted CuO thickness, however, the coercive field H_c increased from 80 Oe to 270 Oe. The apparent increase in the coercive field with the inserted thickness of CuO layer is due to the increment of interface roughness between antiferromagnetic NiO/CuO/NiO and pinned NiFe layers

Keywords

antiferromagnetic materials; copper compounds; exchange interactions (electron); interface structure; magnetic multilayers; magnetoresistance; nickel compounds; surface topography; 200 A; 300 A; NiO-CuO-NiO; antiferromagnetic NiO/CuO/NiO trilayers; coercive field; exchange coupling; inserted CuO thickness; interface roughness; magnetoresistance; pinned NiFe layers; spin-valves; Antiferromagnetic materials; Giant magnetoresistance; Glass; Magnetic field measurement; Magnetic materials; Morphology; Physics; Sputtering; Temperature sensors; X-ray diffraction;

fLanguage

English

Journal_Title

Magnetics, IEEE Transactions on

Publisher

ieee

ISSN

0018-9464

Type

jour

DOI

10.1109/20.619493

Filename

619493