DocumentCode
1508662
Title
Investigation of the frequency dispersion effect in the Root-model applied to conventional and floating-gate MESFETs
Author
Bosch, S. Van den ; Martens, L.
Author_Institution
Dept. of Inf. Technol., Ghent Univ., Belgium
Volume
44
Issue
12
fYear
1997
fDate
12/1/1997 12:00:00 AM
Firstpage
2311
Lastpage
2313
Abstract
This paper investigates measurement and modeling aspects of frequency dispersion effects for GaAs MESFETs. The well-known Root-model´s ability to simulate frequency dispersion is evaluated versus measurements. We propose an alternative frequency weighting function that can easily be implemented in the MDS-system. We also investigate the validity of this approach for “floating-gate” MESFETs and present, for the first time to our knowledge, measurement results for frequency dispersion in this type of device
Keywords
III-V semiconductors; Schottky gate field effect transistors; gallium arsenide; semiconductor device models; GaAs; GaAs MESFET; MDS system; Root model; conventional MESFETs; floating-gate MESFETs; frequency dispersion effect; frequency weighting function; measurement; Circuit simulation; Dispersion; Equations; Fingers; Frequency measurement; Gallium arsenide; Length measurement; MESFETs; Time measurement; Voltage;
fLanguage
English
Journal_Title
Electron Devices, IEEE Transactions on
Publisher
ieee
ISSN
0018-9383
Type
jour
DOI
10.1109/16.644663
Filename
644663
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