Dual spin-valve with Pd-Pt-Mn antiferromagnetic layer

Author

Tanaka, A. ; Shimizu, Y. ; Kishi, H. ; Nagasaka, K. ; Oshiki, M.

Author_Institution

Fujitsu Labs. Ltd., Atsugi, Japan

Volume

33

Issue

5

fYear

1997

fDate

9/1/1997 12:00:00 AM

Firstpage

3592

Lastpage

3594

Abstract

The exchange bias field (H_ex) between a new antiferromagnetic film of Pd-Pt-Mn and a soft magnetic layer was investigated with stacked structures having a Pd-Pt-Mn layer both on and under the soft layers. Pd-Pt-Mn on a Ta/Ni-Fe bilayer buffer exhibits high orientation and a large H_ex to a soft layer deposited on the Pd-Pt-Mn. Using this Ta/Ni-Fe buffer layer, dual spin-valve films with Pd-Pt-Mn antiferromagnetic layers were fabricated. After a 230°C anneal to order the Pd-Pt-Mn, the MR ratio reaches 9.2% and the H_ex of the dual spin-valve is about 255 Oe, which is high enough to provide spin-valve operation

Keywords

annealing; exchange interactions (electron); ferromagnetic materials; giant magnetoresistance; iron alloys; magnetic heads; magnetic multilayers; magnetic thin film devices; magnetoresistive devices; manganese alloys; nickel alloys; palladium alloys; platinum alloys; soft magnetic materials; tantalum; 230 C; MR ratio; Pd-Pt-Mn anti-ferromagnetic layer; PdPtMn-Ta-FeNi; Ta/Ni-Fe bilayer buffer; Ta/Ni-Fe buffer layer; annealing; antiferromagnetic film; dual spin-valve; dual spin-valve films; exchange bias field; heads; high orientation; soft layer; soft magnetic layer; spin-valve operation; stacked structures; Annealing; Antiferromagnetic materials; Atomic layer deposition; Atomic measurements; Helium; Magnetic field measurement; Magnetic films; Sputtering; Substrates; X-ray scattering;

fLanguage

English

Journal_Title

Magnetics, IEEE Transactions on

Publisher

ieee

ISSN

0018-9464

Type

jour

DOI

10.1109/20.619507

Filename

619507