Title :
DC conductivity of metal/DLC/Si/metal heterostructures
Author :
Dluzniewski, M. ; Staryga, E. ; Bak, G.W.
Author_Institution :
Inst. of Phys., Tech. Univ. Lodz, Poland
fDate :
6/1/2001 12:00:00 AM
Abstract :
Electrical conduction of metal/DLC/silicon/metal heterostructures has been investigated, Both DLC/p-Si and DLC/n-Si systems shows rectifying properties. The current-voltage (I-V) characteristics of the heterostructures can be described well by the simplified diode equation with the ideality factor between 21.2 and 3.25, decreasing with increasing temperature. The directive tendency of I-V characteristics is independent of the type of silicon substrate. A simple qualitative band model of DLC/Si junction is proposed
Keywords :
carbon; electrical conductivity; rectification; semiconductor-metal boundaries; silicon; C; DC conductivity; I-V characteristics; Si; current-voltage characteristics; diamond like carbon; electrical conduction; ideality factor; metal/DLC/Si/metal heterostructures; rectifying properties; silicon substrate; simple qualitative band model; simplified diode equation; Bonding; Conductivity; Equations; Insulation; Radio frequency; Semiconductor films; Silicon; Substrates; Temperature; Transistors;
Journal_Title :
Dielectrics and Electrical Insulation, IEEE Transactions on
