• DocumentCode
    1509366
  • Title

    Effect of surface cleaning of substrate on the exchange coupling field in Ni-Fe/25at%Ni-Mn films

  • Author

    Tsunoda, M. ; Konoto, M. ; Uneyama, K. ; Takahashi, M.

  • Author_Institution
    Dept. of Electron. Eng., Tohoku Univ., Sendai, Japan
  • Volume
    33
  • Issue
    5
  • fYear
    1997
  • fDate
    9/1/1997 12:00:00 AM
  • Firstpage
    3688
  • Lastpage
    3690
  • Abstract
    The effect of surface cleaning of Si(100) substrate on the exchange coupling field, Hex was investigated for Ni-Fe/25 at% Ni-Mn films. Hex measured at room temperature rapidly increased when the substrate surface was slightly (about 10 Å) etched by RF plasma just before film deposition, especially in the films with very thin (50 Å) Ni-Fe layer. From structural analysis of the films, and view of the temperature dependence of Hex, it was concluded that the increase of Hex was caused by the enlargement of γ-Ni-Mn grains epitaxially grown on the underlying Ni-Fe grains
  • Keywords
    exchange interactions (electron); ferromagnetic materials; grain size; interface magnetism; iron alloys; magnetic multilayers; manganese alloys; nickel alloys; silicon; surface cleaning; γ-Ni-Mn grains; 10 A; 50 A; Ni-Fe/25at%Ni-Mn films; NiFe-NiMn; Si; Si(100) substrate; exchange coupling field; film deposition; structural analysis; substrate; surface cleaning; temperature dependence; Anisotropic magnetoresistance; Couplings; Dry etching; Epitaxial growth; Magnetic anisotropy; Magnetic films; Perpendicular magnetic anisotropy; Saturation magnetization; Substrates; Surface cleaning;
  • fLanguage
    English
  • Journal_Title
    Magnetics, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9464
  • Type

    jour

  • DOI
    10.1109/20.619539
  • Filename
    619539