Title :
0.25 μm gate-length, MBE-grown AlGaN/GaN HEMTs with high current and high fT
Author :
Kumar, V. ; Lu, W. ; Schwindt, R. ; Van Hove, J. ; Chow, P. ; Adesida, I.
Author_Institution :
Dept. of Electr. & Comput. Eng., Illinois Univ., Urbana, IL, USA
fDate :
6/21/2001 12:00:00 AM
Abstract :
MBE-grown AlGaN/GaN high electron mobility transistors (HEMTs) on sapphire substrates have been fabricated. These 0.25 μm gate-length devices exhibited a maximum drain current density as high as 1.39 A/mm, a unity gain cutoff frequency (fT) of 67 GHz, and a maximum frequency of oscillation (fmax) of 136 GHz. The fT of 67 GHz and fmax of 136 GHz are the highest reported values for 0.25 μm gate-length GaN-based HEMTs
Keywords :
III-V semiconductors; aluminium compounds; current density; gallium compounds; high electron mobility transistors; microwave field effect transistors; molecular beam epitaxial growth; semiconductor device measurement; wide band gap semiconductors; 0.25 mum; 136 GHz; 67 GHz; Al2O3; AlGaN-GaN; AlGaN/GaN HEMTs; MBE growth; gate length; high current; high electron mobility transistors; maximum drain current density; maximum frequency of oscillation; sapphire substrates; unity gain cutoff frequency;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:20010582
