Title :
Dynamic properties of a 1.3 μm light-emission-and-detection (LEAD) diode with a high mesa semi-insulating BH for subscriber TCM transmission
Author :
Kurosaki, Takeshi ; Tohmori, Yuichi ; Fukuda, Mitsuo ; Nakamura, Makoto ; Kimura, Hideaki ; Matsumoto, Shinichi ; Sugie, Toshihiko
Author_Institution :
NTT Opto-Electron. Labs., Kanagawa, Japan
fDate :
11/1/1996 12:00:00 AM
Abstract :
This paper describes the dynamic properties of a 1.3 μm light-emission-and-detection (LEAD) diode that has a high mesa semi-insulating buried heterostructure (SI-BH) to reduce the capacitance of the chip (0.6-0.8 pF). A modulation bandwidth of 12 GHz in laser diode (LD) operation and a detection bandwidth of about 2 GHz in photodetector (PD) operation are achieved using a chip and a module, respectively. In bit error rate (BER) performance at 30 Mb/s, a receiver sensitivity (BER=10-8) of -40.2 dBm is confirmed, and switching characteristics of under 1 μs from LD to PD operation are estimated by circuit simulation
Keywords :
SPICE; integrated optoelectronics; modules; multiplexing; optical fibre subscriber loops; optical receivers; photodetectors; semiconductor lasers; 0.6 to 0.8 pF; 1 mus; 1.3 mum; 12 GHz; 2 GHz; 30 Mbit/s; InP; InP substrate; LEAD diode; SPICE; bidirectional transmission; bit error rate performance; chip capacitance reduction; circuit simulation; detection bandwidth; discharge current property; dynamic properties; high mesa semi-insulating buried heterostructure; laser diode operation; light-emission-and-detection diode; modulation bandwidth; optical module; photodetector operation; receiver sensitivity; subscriber TCM transmission; switching characteristics; Bandwidth; Diodes; Impedance; Mirrors; Optical receivers; Optical sensors; Parasitic capacitance; Partial discharges; Preamplifiers; Temperature dependence;
Journal_Title :
Lightwave Technology, Journal of
