Generating all two-MOS-transistor amplifiers leads to new wide-band LNAs

Author

Bruccoleri, Federico ; Klumperink, Erik A M ; Nauta, Bram

Author_Institution

MESA Res. Inst., Twente Univ., Enschede, Netherlands

Volume

36

Issue

7

fYear

2001

fDate

7/1/2001 12:00:00 AM

Firstpage

1032

Lastpage

1040

Abstract

This paper presents a methodology that systematically generates all 2-MOS-transistor wide-band amplifiers, assuming that MOSFET is exploited as a voltage-controlled current source. This leads to new circuits. Their gain and noise factor have been compared to well-known wide-band amplifiers. One of the new circuits appears to have a relatively low noise factor, which is also gain independent. Based on this new circuit, a 50-900 MHz variable-gain wide-band LNA has been designed in 0.35-μm CMOS. Measurements show a noise figure between 4.3 and 4.9 dB for gains from 6 to 11 dB. These values are more than 2 dB lower than the noise figure of the wide-band common-gate LNA for the same input matching, power consumption, and voltage gain. IIP2 and IIP3 are better than 23.5 and 14.5 dBm, respectively, while the LNA drains only 1.5 mA at 3.3 V

Keywords

CMOS analogue integrated circuits; UHF amplifiers; UHF integrated circuits; VHF amplifiers; VHF circuits; active networks; wideband amplifiers; 1.5 mA; 3.3 V; 50 to 900 MHz; 6 to 11 dB; CMOS amplifier; MOSFET voltage-controlled current source; all two-MOS-transistor amplifiers; noise factor; small signal parameters; systematic generation; variable-gain LNA; voltage gain; wideband LNA; Broadband amplifiers; Circuit noise; Energy consumption; Gain measurement; Impedance matching; MOSFET circuits; Noise figure; Noise measurement; Voltage; Wideband;

fLanguage

English

Journal_Title

Solid-State Circuits, IEEE Journal of

Publisher

ieee

ISSN

0018-9200

Type

jour

DOI

10.1109/4.933458

Filename

933458