Design of overcurrent protection circuit for GaN HEMT

A suitable for high frequency applications with gallium nitride high-electron-mobility transistor overcurrent protection (OCP) circuit has been put forward. The proposed circuit depends on the detection of the drain-source voltage of GaN HEMT to judge the overcurrent fault, then turn off the GaN HEMT rapidly and send a fault signal to the microprocessor in the switching period which the overcurrent fault happened within the frequency of a few hundred kilohertz to several megahertz. Through analysis and experiment, it has been shown that the proposed circuit has the advantages of short-time protection, simple circuit structure and strong capability of anti-interference as well as a higher reliability in high frequency and small and medium-sized power applications.