Title :
An Ultra-Wideband Balun Using Multi-Metal GaAs MMIC Technology
Author :
Lan, Xing ; Fong, Flavia ; Kintis, Mark ; Kono, Keith ; Yamauchi, Derrick ; Luo, Wen-Ben ; Farkas, David
Author_Institution :
Space Technol., Northrop Grumman Corp., Redondo Beach, CA, USA
Abstract :
In this paper, we demonstrate an ultra-wideband MMIC Marchand balun that utilizes a two-layer benzocyclobutene (BCB) GaAs MMIC process with a total of 4 metal layers. This multi-metal technology is built upon a standard GaAs HEMT technology with full compatibility. The fabricated balun achieved an approximately 11:1 bandwidth from 2 to 22 GHz, with less than 3-degree maximum phase imbalance, and less than 1 dB maximum amplitude imbalance. To our knowledge, this is the largest bandwidth ratio ever reported for an MMIC Marchand balun.
Keywords :
HEMT integrated circuits; III-V semiconductors; MMIC; baluns; gallium arsenide; GaAs; HEMT technology; benzocyclobutene; frequency 2 GHz to 22 GHz; multi-metal MMIC technology; ultra-wideband MMIC Marchand balun; Balun; monolithic microwave integrated circuit (MMIC); ultra-wideband (UWB);
Journal_Title :
Microwave and Wireless Components Letters, IEEE
DOI :
10.1109/LMWC.2010.2050302
