• DocumentCode
    1510343
  • Title

    Experimental Investigation of a Cavity-Mode Resonator Using a Micromachined Two-Dimensional Silicon Phononic Crystal in a Square Lattice

  • Author

    Wang, Nan ; Tsai, J.M. ; Hsiao, Fu-Li ; Soon, B.W. ; Kwong, Dim-Lee ; Palaniapan, Moorthi ; Lee, Chengkuo

  • Author_Institution
    Inst. of Microelectron., Agency for Sci., Technol. & Res., Singapore, Singapore
  • Volume
    32
  • Issue
    6
  • fYear
    2011
  • fDate
    6/1/2011 12:00:00 AM
  • Firstpage
    821
  • Lastpage
    823
  • Abstract
    A 2-D silicon phononic crystal (PnC) slab of a square array of cylindrical air holes in a 10-μm-thick freestanding silicon plate with line defects is characterized as a cavity-mode PnC resonator. A piezoelectric aluminum nitride (AlN) film is employed as the interdigital transducers to transmit and detect acoustic waves, thus making the whole microfabrication process CMOS compatible. Both the band structure of the PnC and the transmission spectrum of the proposed PnC resonator are analyzed and optimized using finite-element method. The measured quality factor (Q factor) of the microfabricated PnC resonator is over 1000 at its resonant frequency of 152.46 MHz. The proposed PnC resonator shows promising acoustic resonance characteristics for radio-frequency communications and sensing applications.
  • Keywords
    Q-factor; acoustic resonators; aluminium compounds; band structure; finite element analysis; photonic crystals; piezoelectric materials; radiocommunication; silicon; 2D micromachined silicon phononic crystal; AlN; Si; band structure; cavity-mode resonator; finite element method; frequency 152.46 MHz; interdigital transducer; piezoelectric aluminum nitride film; quality factor; radio-frequency communication; square lattice; transmission spectrum; Crystals; Frequency measurement; Photonic band gap; Q factor; Resonant frequency; Silicon; Slabs; CMOS compatible; Cavity mode; phononic crystal (PnC); resonator;
  • fLanguage
    English
  • Journal_Title
    Electron Device Letters, IEEE
  • Publisher
    ieee
  • ISSN
    0741-3106
  • Type

    jour

  • DOI
    10.1109/LED.2011.2136311
  • Filename
    5763749