Next generation industrial IGBT module

Author

Motto, Eric R. ; Donlon, John F. ; Miyazawa, Masaomi ; Tabata, Makoto ; Muraoka, Hiroaki ; Hieda, Tomohiro ; Radke, Thomas

Author_Institution

Powerex Inc., Youngwood, PA, USA

fYear

2014

fDate

14-18 Sept. 2014

Firstpage

2893

Lastpage

2896

Abstract

In this paper the latest IGBT and free wheel diode chip technologies are utilized in new industrial IGBT modules with reduced size and weight. Chip technology refinement and optimization are employed to provide a reduction of static and dynamic losses. A new package with a novel insulation and heat radiating structure that provides expanded chip mounting area will be presented. It will be shown that the maximum current rating available in a given package size can be increased up to 200% compared to conventional module designs while at the same time the module weight can be reduced by up to 45%.

Keywords

insulated gate bipolar transistors; insulation; semiconductor device packaging; chip technology optimization; chip technology refinement; dynamic loss; expanded chip mounting area; free wheel diode chip technology; heat radiating structure; insulation; next generation industrial IGBT module; package; static loss; Anodes; Cathodes; Energy loss; Insulated gate bipolar transistors; Next generation networking; Oscillators; Substrates; IGBT Module; Insulated gate bipolar transistors;

fLanguage

English

Publisher

ieee

Conference_Titel

Energy Conversion Congress and Exposition (ECCE), 2014 IEEE

Conference_Location

Pittsburgh, PA

Type

conf

DOI

10.1109/ECCE.2014.6953791

Filename

6953791