Title :
Next generation industrial IGBT module
Author :
Motto, Eric R. ; Donlon, John F. ; Miyazawa, Masaomi ; Tabata, Makoto ; Muraoka, Hiroaki ; Hieda, Tomohiro ; Radke, Thomas
Author_Institution :
Powerex Inc., Youngwood, PA, USA
Abstract :
In this paper the latest IGBT and free wheel diode chip technologies are utilized in new industrial IGBT modules with reduced size and weight. Chip technology refinement and optimization are employed to provide a reduction of static and dynamic losses. A new package with a novel insulation and heat radiating structure that provides expanded chip mounting area will be presented. It will be shown that the maximum current rating available in a given package size can be increased up to 200% compared to conventional module designs while at the same time the module weight can be reduced by up to 45%.
Keywords :
insulated gate bipolar transistors; insulation; semiconductor device packaging; chip technology optimization; chip technology refinement; dynamic loss; expanded chip mounting area; free wheel diode chip technology; heat radiating structure; insulation; next generation industrial IGBT module; package; static loss; Anodes; Cathodes; Energy loss; Insulated gate bipolar transistors; Next generation networking; Oscillators; Substrates; IGBT Module; Insulated gate bipolar transistors;
Conference_Titel :
Energy Conversion Congress and Exposition (ECCE), 2014 IEEE
Conference_Location :
Pittsburgh, PA
DOI :
10.1109/ECCE.2014.6953791
