The next generation 6.5kV IGBT

Author

Donlon, John F. ; Motto, Eric R. ; Wiesner, Eugen ; Thal, Eckhard ; Hatori, Kenji ; Sakai, Yoshiki ; Kitamura, S. ; Motomiya, Tetsuo ; Ota, Kaoru ; Kitajima, Yasuko ; Iura, Shinichi ; Yamaguchi, Hitoshi ; Kurachi, Kazuhiro

Author_Institution

Powerex, Inc., Youngwood, PA, USA

fYear

2014

fDate

14-18 Sept. 2014

Firstpage

2897

Lastpage

2900

Abstract

This paper introduces the next (7^th) generation 6.5kV chip set, IGBT and FWDi, for high voltage IGBT (HVIGBT) modules. New technologies for both the IGBT and FWD chips are adopted to increase the current rating while maintaining high robustness and package compatibility. These technologies achieve successful turn off of 4400A at 4.4 times rated nominal current (I_C(nom)) confirming that the rating of the new 6.5kV module can be increased to 1000A from the 750A rating of the conventional module while maintaining high robustness and operating margin.

Keywords

insulated gate bipolar transistors; power transistors; FWDi; HVIGBT; current 1000 A; current 4400 A; current 750 A; current rating; high voltage IGBT; insulated gate bipolar transistors; voltage 6.5 kV; Insulated gate bipolar transistors; Next generation networking; Robustness; Semiconductor optical amplifiers; Temperature dependence; Temperature distribution;

fLanguage

English

Publisher

ieee

Conference_Titel

Energy Conversion Congress and Exposition (ECCE), 2014 IEEE

Conference_Location

Pittsburgh, PA

Type

conf

DOI

10.1109/ECCE.2014.6953792

Filename

6953792