• DocumentCode
    1510471
  • Title

    Spectral output of 1.3 μm InGaAsP semiconductor diode lasers

  • Author

    Peters, F.H. ; Cassidy, D.T.

  • Author_Institution
    Dept. of Eng. Phys., Hamilton, Ont., Canada
  • Volume
    138
  • Issue
    3
  • fYear
    1991
  • fDate
    6/1/1991 12:00:00 AM
  • Firstpage
    195
  • Lastpage
    198
  • Abstract
    Theories of the spectral output of diode lasers assume that the devices are uniform along the length of the active region. Spatially-resolved degree of polarisation measurements are presented which show that devices are not uniform along the length and that significant scattering exists along the length of the active region. The spectral output of lasers is found to be correlated with the amount of scattering in the active region. Calculations to support and explain the observed correlation are presented. For the devices tested, it is found that gain guided devices tend to exhibit less scattering than index guided devices and tend to operate more multi-longitudinal mode. Based on these measurements it is suggested that differences in the spectral properties of index and gain guided lasers may be explained on the basis of the light scattering characteristics of the active region
  • Keywords
    III-V semiconductors; gallium arsenide; gallium compounds; indium compounds; infrared sources; laser modes; light polarisation; light scattering; refractive index; semiconductor junction lasers; 1.3 micron; InGaAsP; active region; active region uniformity; gain guided devices; index guided devices; light scattering; multi-longitudinal mode; polarisation measurements; semiconductor diode lasers; spectral output;
  • fLanguage
    English
  • Journal_Title
    Optoelectronics, IEE Proceedings J
  • Publisher
    iet
  • ISSN
    0267-3932
  • Type

    jour

  • Filename
    76583