Title :
GaN Schottky Barrier Photodetectors
Author :
Chang, S.J. ; Wang, S.M. ; Chang, P.C. ; Kuo, C.H. ; Young, S.J. ; Chen, T.P. ; Wu, S.L. ; Huang, B.R.
Author_Institution :
Dept. of Electr. Eng., Nat. Cheng Kung Univ., Tainan, Taiwan
Abstract :
We report the fabrication of GaN photodetectors (PDs) prepared on nanorod template. Using the nanorods template, it was found that we can effectively suppress leakage current, ultraviolet-to-visible rejection ratio and photoconductive gain of the PDs. With -2 V applied bias, it was found that noise equivalent power (NEP) and normalized detectivity (D*) were 7.00 × 10-10 W and 2.26 × 109 cmHz0.5 W-1, respectively, for the PD prepared on nanorods template. With the same -2 V bias, it was found that NEP and D* were 3.56 × 10-6 W and 4.44 × 105 cmHz0.5 W-1, respectively, for the PD prepared on a conventional sapphire substrate.
Keywords :
III-V semiconductors; Schottky barriers; gallium compounds; leakage currents; nanorods; photoconducting devices; photodetectors; wide band gap semiconductors; GaN; Schottky barrier photodetectors; leakage current suppression; nanorods template; noise equivalent power; normalized detectivity; power 0.0000000007 W; power 0.00000356 W; sapphire substrate; ultraviolet-to-visible rejection ratio; voltage -2 V; ultraviolet; Nanorod template; noise; photodetector;
Journal_Title :
Sensors Journal, IEEE
DOI :
10.1109/JSEN.2010.2045889
