Title :
100 GHZ integrated CMOS passive imager with >100 MV/W responsivity, 23fW/ √HZ NEP
Author :
Gu, Qun Jane ; Xu, Zongben ; Jian, H.-Y. ; Tang, Anthony ; Chang, Mau-Chung Frank ; Huang, Chien-Yi ; Nien, Chin-Chung
Author_Institution :
Dept. of Electr. & Comput. Eng., Univ. of Florida, Gainesville, FL, USA
Abstract :
Presented is a 100 GHz fully differential CMOS passive imager for system-on-chip integration, which features high gain, high sensitivity and high resilience to flicker noise and gain variation. It integrates a low-noise amplifier, a Dicke switch, a detector and a baseband programmable gain amplifier in a single chip, and achieves the best noise equivalent power (NEP) (23fW /√(Hz)/26fW /√(Hz) for without/with Dicke switch) in CMOS, the highest responsivity (>;100 MV/W) in silicon. It also demonstrates 1.96 K noise-equivalent temperature difference in 30 ms integration time.
Keywords :
CMOS image sensors; field effect MIMIC; low noise amplifiers; system-on-chip; Dicke switch; baseband programmable gain amplifier; field effect MIMIC; flicker noise; frequency 100 GHz; fully differential CMOS passive imager; gain variation; low-noise amplifier; noise equivalent power; system-on-chip integration;
Journal_Title :
Electronics Letters
DOI :
10.1049/el.2011.0213
