Title :
High temperature λ ~4 μm In0.7Ga0.3As/In0.34Al0.66As quantum cascase lasers grown by movpe
Author :
Revin, D.G. ; Kennedy, Krista ; Commin, J.P. ; Qiu, Yijie ; Walther, Thomas ; Cockburn, J.W. ; Krysa, A.B.
Author_Institution :
Dept. of Phys. & Astron., Univ. of Sheffield, Sheffield, UK
Abstract :
Reported is the development of λ ~ 4 μm highly strain-compensated In0.7Ga0.3As/In0.34Al0.66As/InP quantum cascade lasers grown by metal organic vapour phase epitaxy. 10 μm-wide and 3 mm-long devices with as-cleaved facets deliver more than 2.4 W of peak optical power from both facets at 300 K with threshold current density of 2.5 kA/cm2. The lasers operate up to at least 400 K with characteristic temperature of 153 K.
Keywords :
III-V semiconductors; MOCVD; current density; gallium arsenide; indium compounds; quantum cascade lasers; vapour phase epitaxial growth; In0.7Ga0.3As-In0.34Al0.66As; MOVPE; high strain-compensated quantum cascade lasers; metal organic vapour phase epitaxy; size 10 mum; size 3 mm; temperature 153 K; temperature 300 K; threshold current density;
Journal_Title :
Electronics Letters
DOI :
10.1049/el.2011.0656
