Title :
Broadly Tunable InGaAsP–InP Strained Multiquantum-Well External Cavity Diode Laser
Author :
Fedorova, Ksenia A. ; Cataluna, Maria Ana ; Kudryashov, Igor ; Khalfin, Victor ; Rafailov, Edik U.
Author_Institution :
Photonics & Nanosci. Group, Univ. of Dundee, Dundee, UK
Abstract :
In this letter, we demonstrate a broadly tunable InGaAs-InP strained multiquantum-well external cavity diode laser, which operates in the spectral range of 1494-1667 nm. A maximum continuous-wave output power in excess of 81 mW and sidemode suppression ratio higher than 50 dB were achieved in the central part of the tuning range. Different pump current and temperature regimes are investigated.
Keywords :
III-V semiconductors; gallium arsenide; indium compounds; laser cavity resonators; laser tuning; optical pumping; quantum well lasers; InGaAsP-InP; continuous-wave output power; pump current; sidemode suppression ratio; tunable strained multiquantum-well external cavity diode laser; wavelength 1494 nm to 1667 nm; Quantum-well (QW) lasers; semiconductor lasers;
Journal_Title :
Photonics Technology Letters, IEEE
DOI :
10.1109/LPT.2010.2051661
