DocumentCode
1510920
Title
Broadly Tunable InGaAsP–InP Strained Multiquantum-Well External Cavity Diode Laser
Author
Fedorova, Ksenia A. ; Cataluna, Maria Ana ; Kudryashov, Igor ; Khalfin, Victor ; Rafailov, Edik U.
Author_Institution
Photonics & Nanosci. Group, Univ. of Dundee, Dundee, UK
Volume
22
Issue
16
fYear
2010
Firstpage
1205
Lastpage
1207
Abstract
In this letter, we demonstrate a broadly tunable InGaAs-InP strained multiquantum-well external cavity diode laser, which operates in the spectral range of 1494-1667 nm. A maximum continuous-wave output power in excess of 81 mW and sidemode suppression ratio higher than 50 dB were achieved in the central part of the tuning range. Different pump current and temperature regimes are investigated.
Keywords
III-V semiconductors; gallium arsenide; indium compounds; laser cavity resonators; laser tuning; optical pumping; quantum well lasers; InGaAsP-InP; continuous-wave output power; pump current; sidemode suppression ratio; tunable strained multiquantum-well external cavity diode laser; wavelength 1494 nm to 1667 nm; Quantum-well (QW) lasers; semiconductor lasers;
fLanguage
English
Journal_Title
Photonics Technology Letters, IEEE
Publisher
ieee
ISSN
1041-1135
Type
jour
DOI
10.1109/LPT.2010.2051661
Filename
5482061
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