DocumentCode :
1511006
Title :
Impact of Individual Charged Gate-Oxide Defects on the Entire 
– 
Characteri
Author :
Franco, Jacopo ; Kaczer, Ben ; Toledano-Luque, María ; Bukhori, Muhammad Faiz ; Roussel, Philippe J. ; Grasser, Tibor ; Asenov, Asen ; Groeseneken, Guido
Author_Institution :
Imec, Leuven, Belgium
Volume :
33
Issue :
6
fYear :
2012
fDate :
6/1/2012 12:00:00 AM
Firstpage :
779
Lastpage :
781
Abstract :
The measurement of the entire ID-VG characteristic of a nanoscaled pMOSFET before and after the capture of a single elementary charge in a gate-oxide defect is demonstrated. The impact of a single trapped carrier on the device characteristics is compared with 3-D atomistic device simulations. The ID-VG behavior is identified to depend on the location of the oxide defect with respect to the critical spot of the current percolation path in the channel.
Keywords :
MOSFET; nanoelectronics; semiconductor device models; 3D atomistic device simulations; critical spot; current percolation path; device characteristics; individual charged gate-oxide defects; nanoscaled FET; nanoscaled pMOSFET; single elementary charge; single trapped carrier; Atomic measurements; FETs; Logic gates; MOSFET circuits; Nanoscale devices; Semiconductor process modeling; Nanoscale; negative bias temperature instability (NBTI); pMOSFET; reliability; time-dependent variability;
fLanguage :
English
Journal_Title :
Electron Device Letters, IEEE
Publisher :
ieee
ISSN :
0741-3106
Type :
jour
DOI :
10.1109/LED.2012.2192410
Filename :
6196171
Link To Document :
