Direct Detection of 100–5000 eV Electrons With Delta-Doped Silicon CMOS and Electron-Multiplying CCD Imagers

Author

Jacquot, Blake C. ; Hoenk, Michael E. ; Jones, Todd J. ; Cunningham, T.J. ; Nikzad, Shouleh

Author_Institution

Jet Propulsion Lab., California Inst. of Technol., Pasadena, CA, USA

Volume

59

Issue

7

fYear

2012

fDate

7/1/2012 12:00:00 AM

Firstpage

1988

Lastpage

1992

Abstract

We have demonstrated a direct detection of 100-5000 eV electrons with a back-illuminated boron delta-doped hybrid silicon complementary metal-oxide-semiconductor imager operating in full depletion and a silicon electron-multiplying charge-coupled device (CCD) operating in partial depletion. The delta-doping molecular beam epitaxy increases sensitivity to low-energy electrons and improves low-energy electron detection threshold relative to conventional solid-state detectors. We compare the gain measured in these two delta-doped devices with gain measured from control delta-doped CCDs.

Keywords

CCD image sensors; CMOS image sensors; elemental semiconductors; silicon; Si; back-illuminated boron delta-doped hybrid silicon CMOS imager; complementary metal-oxide-semiconductor imager; delta-doped silicon CMOS imagers; delta-doping molecular beam epitaxy; electron volt energy 100 eV to 5000 eV; low-energy electron detection; silicon electron-multiplying CCD imager; silicon electron-multiplying charge-coupled device imager; solid-state detectors; Backscatter; CMOS integrated circuits; Charge coupled devices; Detectors; Gain measurement; Imaging; Silicon; Charge-coupled device (CCD) image sensors; complementary metal–oxide–semiconductor (CMOS) image sensors; electron detection; silicon radiation detectors;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/TED.2012.2194715

Filename

6196215