DocumentCode :
1511325
Title :
Investigation of Abnormal V_{\\rm TH}/V_{\\rm FB} Shifts Under Operating Conditions in Flash Memory Cells With $hbox{Al}_{2}hbox{O}_{3}$; Flash memory; charge trapping (CT); electron trap; floating gate (FG); high-$kappa$ dielectrics; instability; mobile charges;
fLanguage :
English
Journal_Title :
Electron Devices, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9383
Type :
jour
DOI :
10.1109/TED.2012.2194294
Filename :
6196218
Link To Document :
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