DocumentCode :
1511580
Title :
Models and algorithms for bounds on leakage in CMOS circuits
Author :
Johnson, Mark C. ; Somasekhar, Dinesh ; Roy, Kaushik
Author_Institution :
Dept. of Electr. & Comput. Eng., Rose-Hulman Inst. of Technol., Terre Haute, IN, USA
Volume :
18
Issue :
6
fYear :
1999
fDate :
6/1/1999 12:00:00 AM
Firstpage :
714
Lastpage :
725
Abstract :
Subthreshold leakage current in deep submicron MOS transistors is becoming a significant contributor to power dissipation in CMOS circuits as threshold voltages and channel lengths are reduced. Consequently, estimation of leakage current and identification of minimum and maximum leakage conditions are becoming important, especially in low power applications. In this paper we outline methods for estimating leakage at the circuit level and then propose heuristic and exact algorithms to accomplish the same task for random combinational logic. In most cases the heuristic is found to obtain bounds on leakage that are close and often identical to bounds determined by a complete branch and bound search. Methods are also demonstrated to show how estimation accuracy can be traded off against execution time. The proposed algorithms have potential application in power management applications or quiescent current (IDDQ) testing if one wished to control leakage by application of appropriate input vectors. For a variety of benchmark circuits, leakage was found to vary by as much as a factor of six over the space of possible input vectors
Keywords :
CMOS digital integrated circuits; VLSI; integrated circuit modelling; integrated circuit testing; leakage currents; logic testing; low-power electronics; CMOS circuits; benchmark circuits; branch and bound search; channel lengths; circuit level; deep submicron MOS transistors; exact algorithms; execution time; heuristic algorithms; input vectors; low power applications; power dissipation; power management applications; quiescent current; random combinational logic; subthreshold leakage current; threshold voltages; Circuit testing; Combinational circuits; Energy management; Heuristic algorithms; Leakage current; MOSFETs; Power dissipation; Semiconductor device modeling; Subthreshold current; Threshold voltage;
fLanguage :
English
Journal_Title :
Computer-Aided Design of Integrated Circuits and Systems, IEEE Transactions on
Publisher :
ieee
ISSN :
0278-0070
Type :
jour
DOI :
10.1109/43.766723
Filename :
766723
Link To Document :
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