FMR line width and field dependent domain wall mobility in garnets films

Author

Chen, S.C. ; Huang, H.L.

Author_Institution

Dept. of Phys., Nat. Tsing Hua Univ., Hsinchu, Taiwan

Volume

33

Issue

5

fYear

1997

fDate

9/1/1997 12:00:00 AM

Firstpage

3978

Lastpage

3980

Abstract

The domain wall mobility derived from the generalized Landau-Lifshitz equation taking into account nonconservation of magnetization modulus yields two distinctly different damping constants. The first one is related to ferromagnetic resonance line width which is independent of in-plane field. The second is due to the presence of the domain wall and is transverse field dependent. The relative importance of the two constants depends very much on the presence or absence of the in-plane field. The formulation also allows us to make a reasonable estimate of the longitudinal susceptibility of the sample

Keywords

ferromagnetic resonance; garnets; magnetic domain walls; magnetic susceptibility; magnetic thin films; magnetisation; spectral line breadth; EuGGIG; EuGa5O12Fe5O12; FMR line width; damping constants; field dependent domain wall mobility; garnet films; generalized Landau-Lifshitz equation; in-plane field; longitudinal susceptibility; magnetization modulus nonconservation; transverse field dependence; Anisotropic magnetoresistance; Damping; Estimation theory; Garnet films; Iron; Magnetic anisotropy; Magnetic resonance; Magnetization; Samarium; Tensile stress;

fLanguage

English

Journal_Title

Magnetics, IEEE Transactions on

Publisher

ieee

ISSN

0018-9464

Type

jour

DOI

10.1109/20.619635

Filename

619635