DocumentCode :
1511822
Title :
FMR line width and field dependent domain wall mobility in garnets films
Author :
Chen, S.C. ; Huang, H.L.
Author_Institution :
Dept. of Phys., Nat. Tsing Hua Univ., Hsinchu, Taiwan
Volume :
33
Issue :
5
fYear :
1997
fDate :
9/1/1997 12:00:00 AM
Firstpage :
3978
Lastpage :
3980
Abstract :
The domain wall mobility derived from the generalized Landau-Lifshitz equation taking into account nonconservation of magnetization modulus yields two distinctly different damping constants. The first one is related to ferromagnetic resonance line width which is independent of in-plane field. The second is due to the presence of the domain wall and is transverse field dependent. The relative importance of the two constants depends very much on the presence or absence of the in-plane field. The formulation also allows us to make a reasonable estimate of the longitudinal susceptibility of the sample
Keywords :
ferromagnetic resonance; garnets; magnetic domain walls; magnetic susceptibility; magnetic thin films; magnetisation; spectral line breadth; EuGGIG; EuGa5O12Fe5O12; FMR line width; damping constants; field dependent domain wall mobility; garnet films; generalized Landau-Lifshitz equation; in-plane field; longitudinal susceptibility; magnetization modulus nonconservation; transverse field dependence; Anisotropic magnetoresistance; Damping; Estimation theory; Garnet films; Iron; Magnetic anisotropy; Magnetic resonance; Magnetization; Samarium; Tensile stress;
fLanguage :
English
Journal_Title :
Magnetics, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9464
Type :
jour
DOI :
10.1109/20.619635
Filename :
619635
Link To Document :
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