Title :
Intersubband transitions at 1.3 and 1.55 μm in a novel coupled InGaAs-AlAsSb double-quantum-well structure
Author :
Neogi, A. ; Mozume, T. ; Yoshida, H. ; Wada, O.
Author_Institution :
Femtosecond Technol. Res. Assoc., Tsukuba, Japan
fDate :
6/1/1999 12:00:00 AM
Abstract :
We report the first observation of intersubband absorption at 1.3 μm in a coupled InGaAs-AlAsSb double-quantum-well structure lattice matched to InP substrate. The novel structure exhibits intersubband transitions concurrently at 1.3 and 1.55 μm due to the strong coupling of the intersubband states of the adjacent wells. A transient analysis of optical response in the multilevel conduction subband states for the designed structure indicates ultrafast optical switching behavior with a subpicosecond response.
Keywords :
III-V semiconductors; electro-optical switches; gallium arsenide; high-speed optical techniques; indium compounds; semiconductor quantum wells; transient analysis; 1.3 mum; 1.55 mum; InGaAs-AlAsSb; InP substrate; adjacent wells; coupled InGaAs-AlAsSb double-quantum-well structure; coupled InGaAs-AlAsSb double-quantum-well structure lattice; intersubband absorption; intersubband transitions; lattice matched; multilevel conduction subband states; optical response; subpicosecond response; transient analysis; ultrafast optical switching behavior; Absorption; Communication switching; Indium phosphide; Lattices; Nonlinear optics; Optical modulation; Optical switches; Resonance; Substrates; Ultrafast optics;
Journal_Title :
Photonics Technology Letters, IEEE
