Intersubband transitions at 1.3 and 1.55 μm in a novel coupled InGaAs-AlAsSb double-quantum-well structure

Author

Neogi, A. ; Mozume, T. ; Yoshida, H. ; Wada, O.

Author_Institution

Femtosecond Technol. Res. Assoc., Tsukuba, Japan

Volume

11

Issue

6

fYear

1999

fDate

6/1/1999 12:00:00 AM

Firstpage

632

Lastpage

634

Abstract

We report the first observation of intersubband absorption at 1.3 μm in a coupled InGaAs-AlAsSb double-quantum-well structure lattice matched to InP substrate. The novel structure exhibits intersubband transitions concurrently at 1.3 and 1.55 μm due to the strong coupling of the intersubband states of the adjacent wells. A transient analysis of optical response in the multilevel conduction subband states for the designed structure indicates ultrafast optical switching behavior with a subpicosecond response.

Keywords

III-V semiconductors; electro-optical switches; gallium arsenide; high-speed optical techniques; indium compounds; semiconductor quantum wells; transient analysis; 1.3 mum; 1.55 mum; InGaAs-AlAsSb; InP substrate; adjacent wells; coupled InGaAs-AlAsSb double-quantum-well structure; coupled InGaAs-AlAsSb double-quantum-well structure lattice; intersubband absorption; intersubband transitions; lattice matched; multilevel conduction subband states; optical response; subpicosecond response; transient analysis; ultrafast optical switching behavior; Absorption; Communication switching; Indium phosphide; Lattices; Nonlinear optics; Optical modulation; Optical switches; Resonance; Substrates; Ultrafast optics;

fLanguage

English

Journal_Title

Photonics Technology Letters, IEEE

Publisher

ieee

ISSN

1041-1135

Type

jour

DOI

10.1109/68.766767

Filename

766767