DocumentCode :
1511885
Title :
Delayed Switching in Memristors and Memristive Systems
Author :
Wang, Frank Zhigang ; Helian, Na ; Wu, Sining ; Lim, Mian-Guan ; Guo, Yike ; Parker, Michael Andrew
Author_Institution :
Cambridge-Cranfield High Performance Comput. Facility, Cranfield Univ. Campus, Cranfield, UK
Volume :
31
Issue :
7
fYear :
2010
fDate :
7/1/2010 12:00:00 AM
Firstpage :
755
Lastpage :
757
Abstract :
It was found that the switching in a memristor takes place with a time delay (this peculiar feature is named “the delayed switching”). This feature has been verified by a circuit-based experiment. The physical interpretation of this phenomenon is that an electron element possesses certain inertia, i.e., charge q or flux is inertial with the tendency to remain unchanged (settle to some equilibrium state). It cannot respond as rapidly as the fast variation in the excitation waveform and always takes a finite but small time interval to change its resistance value, as it must take place in a memristor or memristive system. In addition, a potential application of using this feature in ultradense computer memory has been discussed.
Keywords :
circuit switching; electric resistance; memristors; circuit-based experiment; delayed switching; electron element; excitation waveform; memristive system; memristor; resistance value; time delay; ultradense computer memory; Electronic device; memristive system; memristor; random access memory; resistively switching;
fLanguage :
English
Journal_Title :
Electron Device Letters, IEEE
Publisher :
ieee
ISSN :
0741-3106
Type :
jour
DOI :
10.1109/LED.2010.2049560
Filename :
5482202
Link To Document :
بازگشت