• DocumentCode
    1512369
  • Title

    Dependence of intersubband absorption on the number of quantum wells: Radiative coupling effects

  • Author

    Chen, Xin

  • Author_Institution
    Dept. of Phys., Univ. of Manchester Inst. of Sci. & Technol., UK
  • Volume
    35
  • Issue
    6
  • fYear
    1999
  • fDate
    6/1/1999 12:00:00 AM
  • Firstpage
    922
  • Lastpage
    927
  • Abstract
    On the basis of a microscopic theory, in which the electromagnetic and electronic nonlocalities have been incorporated, dependence of the intersubband absorption on the number of quantum wells (QWs) is studied. Detailed numerical simulations show that changes in the number of wells, the angle of incidence, and the barrier thickness between adjacent wells can significantly modify the radiative coupling among QWs. Consequently, the intersubband absorption spectrum can also be changed
  • Keywords
    current density; light absorption; semiconductor device models; semiconductor quantum wells; barrier thickness; electromagnetic nonlocalities; electronic nonlocalities; intersubband absorption; intersubband absorption spectrum; microscopic theory; quantum well number; radiative coupling; Current density; Electromagnetic coupling; Electromagnetic radiation; Electromagnetic wave absorption; Integrated optics; Nonlinear optics; Optical coupling; Quantum mechanics; Quantum well devices; Ultrafast optics;
  • fLanguage
    English
  • Journal_Title
    Quantum Electronics, IEEE Journal of
  • Publisher
    ieee
  • ISSN
    0018-9197
  • Type

    jour

  • DOI
    10.1109/3.766835
  • Filename
    766835