DocumentCode :
1512537
Title :
A 10-bit 100-MS/s Reference-Free SAR ADC in 90 nm CMOS
Author :
Zhu, Yan ; Chan, Chi-Hang ; Chio, U-Fat ; Sin, Sai-Weng ; Seng-Pan U ; Martins, Rui Paulo ; Maloberti, Franco
Author_Institution :
VLSI Lab., Univ. of Macau, Macao, China
Volume :
45
Issue :
6
fYear :
2010
fDate :
6/1/2010 12:00:00 AM
Firstpage :
1111
Lastpage :
1121
Abstract :
A 1.2 V 10-bit 100 MS/s Successive Approximation (SA) ADC is presented. The scheme achieves high-speed and low-power operation thanks to the reference-free technique that avoids the static power dissipation of an on-chip reference generator. Moreover, the use of a common-mode based charge recovery switching method reduces the switching energy and improves the conversion linearity. A variable self-timed loop optimizes the reset time of the preamplifier to improve the conversion speed. Measurement results on a 90 nm CMOS prototype operated at 1.2 V supply show 3 mW total power consumption with a peak SNDR of 56.6 dB and a FOM of 77 fJ/conv-step.
Keywords :
CMOS integrated circuits; preamplifiers; CMOS prototype; common-mode based charge recovery switching; conversion linearity; on-chip reference generator; power 3 mW; power consumption; preamplifier; reference-free SAR ADC; size 90 nm; static power dissipation; successive approximation ADC; switching energy; variable self-timed loop; voltage 1.2 V; word length 10 bit; Digital video broadcasting; Energy consumption; Laboratories; Linearity; Pipelines; Power dissipation; Power generation; Silicon compounds; Very large scale integration; Voltage; Charge-recovery; reference-free; switched technique;
fLanguage :
English
Journal_Title :
Solid-State Circuits, IEEE Journal of
Publisher :
ieee
ISSN :
0018-9200
Type :
jour
DOI :
10.1109/JSSC.2010.2048498
Filename :
5482529
Link To Document :
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