DocumentCode :
1512656
Title :
A short-channel DC SPICE model for polysilicon thin-film transistors including temperature effects
Author :
Jacunski, Mark D. ; Shur, Michael S. ; Owusu, Albert A. ; Ytterdal, Trond ; Hack, Michael ; Iniguez, B.
Author_Institution :
Dept. of Electr. Eng., Virginia Univ., Charlottesville, VA, USA
Volume :
46
Issue :
6
fYear :
1999
fDate :
6/1/1999 12:00:00 AM
Firstpage :
1146
Lastpage :
1158
Abstract :
A semi-empirical analytical model for the DC characteristics of both n- and p-channel polysilicon thin-film transistors is described. The model is suitable for implementation in a SPICE circuit simulator. Our semi-empirical approach results in a physically based model with a minimum of parameters, which are readily related to the device structure and fabrication process. The intrinsic DC model describes all four regimes of operation: leakage, subthreshold, above threshold, and kink. The effects of temperature and channel length are also included in the short-channel model
Keywords :
SPICE; elemental semiconductors; leakage currents; semiconductor device models; silicon; thin film transistors; DC characteristics; Si; above threshold regime; channel length; circuit simulator; device structure; fabrication process; intrinsic DC model; kink regime; leakage regime; physically based model; polysilicon thin-film transistors; semi-empirical analytical model; short-channel DC SPICE model; subthreshold regime; temperature effects; Active matrix liquid crystal displays; Analytical models; Circuit simulation; Computer hacking; Costs; Driver circuits; HDTV; SPICE; Temperature; Thin film transistors;
fLanguage :
English
Journal_Title :
Electron Devices, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9383
Type :
jour
DOI :
10.1109/16.766877
Filename :
766877
Link To Document :
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